P-Channel MOSFET, 27 A, 20 V, 8-Pin PowerPAK 1212-8 Vishay SISS23DN-T1-GE3

RS Stock No.:: 814-1314
Mfr. Part No.:: SISS23DN-T1-GE3
Brand:: Vishay

P-Channel MOSFET, 27 A, 20 V, 8-Pin PowerPAK 1212-8 Vishay SISS23DN-T1-GE3

This image is representative of the product range

Subtotal (1 pack of 20 units)**

$21.16

(exc. GST)

$23.28

(inc. GST)

2960 In Global stock for delivery within 10 working day(s)*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over $80.00 ex GST

Units	Per unit	Per Pack**
20 +	$1.058	$21.16

**price indicative

RS Stock No.:: 814-1314
Mfr. Part No.:: SISS23DN-T1-GE3
Brand:: Vishay

SiSS23DN, P-Channel 20V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	27 A
Maximum Drain Source Voltage	20 V
Package Type	PowerPAK 1212-8
Series	TrenchFET
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	11.5 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	0.4V
Maximum Power Dissipation	57 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-8 V, +8 V
Number of Elements per Chip	1
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Length	3.3mm
Typical Gate Charge @ Vgs	195 nC @ 10 V
Width	3.3mm
Height	0.78mm
Minimum Operating Temperature	-55 °C

P-Channel MOSFET, 27 A, 20 V, 8-Pin PowerPAK 1212-8 Vishay SISS23DN-T1-GE3

FREE delivery for orders over $80.00 ex GST

P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor

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