N-Channel MOSFET, 27 A, 40 V, 8-Pin PowerPAK SO-8 Vishay SIR416DP-T1-GE3

RS Stock No.:: 814-1272
Mfr. Part No.:: SIR416DP-T1-GE3
Brand:: Vishay

N-Channel MOSFET, 27 A, 40 V, 8-Pin PowerPAK SO-8 Vishay SIR416DP-T1-GE3

This image is representative of the product range

Available for back order.

Price (ex. GST) Each (In a Pack of 10)

$1.668

(exc. GST)

$1.835

(inc. GST)

Units	Per unit	Per Pack*
10 +	$1.668	$16.68

*price indicative

RS Stock No.:: 814-1272
Mfr. Part No.:: SIR416DP-T1-GE3
Brand:: Vishay

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Vishay Semiconductor

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	27 A
Maximum Drain Source Voltage	40 V
Package Type	PowerPAK SO-8
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	4.2 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	69 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Transistor Material	Si
Width	5.26mm
Length	6.25mm
Typical Gate Charge @ Vgs	59 nC @ 10 V
Maximum Operating Temperature	+150 °C
Height	1.12mm
Minimum Operating Temperature	-55 °C