Toshiba DTMOSIV Type N-Channel MOSFET, 13.7 A, 650 V Enhancement, 3-Pin TO-263 TK14G65W,RQ(S

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Subtotal (1 pack of 5 units)*

$21.56

(exc. GST)

$23.715

(inc. GST)

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  • Plus 5 unit(s) shipping from 29 December 2025
  • Plus 855 unit(s) shipping from 05 January 2026
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Units
Per unit
Per Pack*
5 - 20$4.312$21.56
25 - 45$4.182$20.91
50 - 245$4.052$20.26
250 - 495$3.936$19.68
500 +$3.82$19.10

*price indicative

RS Stock No.:
133-2797
Mfr. Part No.:
TK14G65W,RQ(S
Brand:
Toshiba
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Brand

Toshiba

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

13.7A

Maximum Drain Source Voltage Vds

650V

Series

DTMOSIV

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

250mΩ

Channel Mode

Enhancement

Forward Voltage Vf

-1.7V

Typical Gate Charge Qg @ Vgs

35nC

Maximum Power Dissipation Pd

130W

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

150°C

Length

10.35mm

Height

4.46mm

Standards/Approvals

No

Width

8.8 mm

Automotive Standard

No

COO (Country of Origin):
JP

MOSFET Transistors, Toshiba


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