N-Channel MOSFET, 13.7 A, 650 V, 3-Pin D2PAK Toshiba TK14G65W,RQ(S
- RS Stock No.:
- 133-2797
- Mfr. Part No.:
- TK14G65W,RQ(S
- Brand:
- Toshiba
10 In Global stock for delivery within 5 working day(s)
Price (ex. GST) Each (In a Pack of 5)
$3.404
(exc. GST)
$3.744
(inc. GST)
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | $3.404 | $17.02 |
| 25 - 45 | $3.302 | $16.51 |
| 50 - 245 | $3.20 | $16.00 |
| 250 - 495 | $3.108 | $15.54 |
| 500 + | $3.016 | $15.08 |
*price indicative
- RS Stock No.:
- 133-2797
- Mfr. Part No.:
- TK14G65W,RQ(S
- Brand:
- Toshiba
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- JP
Product Details
MOSFET Transistors, Toshiba
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 13.7 A |
| Maximum Drain Source Voltage | 650 V |
| Series | DTMOSIV |
| Package Type | D2PAK (TO-263) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 250 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.5V |
| Minimum Gate Threshold Voltage | 2.5V |
| Maximum Power Dissipation | 130 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 35 nC @ 10 V |
| Length | 10.35mm |
| Transistor Material | Si |
| Width | 8.8mm |
| Height | 4.46mm |
| Forward Diode Voltage | 1.7V |
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