Vishay TrenchFET N channel-Channel MOSFET, 2.6 A, 20 V Enhancement, 3-Pin SOT-23 SI2302HDS-T1-GE3

N
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Subtotal (1 unit)*

$0.28

(exc. GST)

$0.31

(inc. GST)

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1 - 24$0.28
25 - 99$0.19
100 - 499$0.14
500 +$0.09

*price indicative

RS Stock No.:
735-213
Mfr. Part No.:
SI2302HDS-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

2.6A

Maximum Drain Source Voltage Vds

20V

Series

TrenchFET

Package Type

SOT-23

Mount Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance Rds

0.075Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±8 V

Typical Gate Charge Qg @ Vgs

3.5nC

Maximum Power Dissipation Pd

0.71W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

COO (Country of Origin):
US

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