Vishay TrenchFET Type N-Channel MOSFET, 20 A, 100 V Enhancement, 8-Pin PowerPAK 1212 SiSH892BDN-T1-GE3

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Subtotal (1 pack of 10 units)*

$12.15

(exc. GST)

$13.36

(inc. GST)

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Last RS stock
  • Final 5,970 unit(s), ready to ship from another location
Units
Per unit
Per Pack*
10 - 40$1.215$12.15
50 - 90$1.178$11.78
100 - 240$1.142$11.42
250 - 990$1.107$11.07
1000 +$1.073$10.73

*price indicative

Packaging Options:
RS Stock No.:
228-2931
Mfr. Part No.:
SiSH892BDN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

100V

Series

TrenchFET

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

30.4mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

17.4nC

Maximum Power Dissipation Pd

29W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay N-Channel 100 V (D-S) MOSFET PowerPAK.

100 % Rg and UIS tested

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