Vishay TrenchFET Type N-Channel MOSFET, 58 A, 30 V Enhancement, 8-Pin SO-8

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Subtotal (1 reel of 3000 units)*

$1,299.00

(exc. GST)

$1,428.00

(inc. GST)

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Units
Per unit
Per Reel*
3000 - 12000$0.433$1,299.00
15000 +$0.39$1,170.00

*price indicative

RS Stock No.:
165-6980
Mfr. Part No.:
SIRA14DP-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

58A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

8.5mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

31.2W

Forward Voltage Vf

0.76V

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

19.4nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

5.26 mm

Height

1.12mm

Length

6.25mm

Automotive Standard

No

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor


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