Vishay SiR N channel-Channel MOSFET, 473 A, 40 V Enhancement, 8-Pin PowerPAK SO-8S SiRS4400DP

N

This image is representative of the product range

Bulk discount available
View bulk pricing options

Subtotal (1 unit)*

$10.42

(exc. GST)

$11.46

(inc. GST)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 16 November 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
1 - 9$10.42
10 - 49$6.47
50 - 99$5.00
100 +$3.39

*price indicative

RS Stock No.:
735-143
Mfr. Part No.:
SiRS4400DP
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

473A

Maximum Drain Source Voltage Vds

40V

Package Type

PowerPAK SO-8S

Series

SiR

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.00069Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

195nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

278W

Forward Voltage Vf

40V

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Width

5mm

Height

2mm

Length

6mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N-Channel MOSFET rated for 60V drain-source voltage, optimized for high-efficiency switching in AI power server DC/DC converters and synchronous rectification circuits. It achieves very low on-resistance of 1.7mΩ maximum at 10V gate drive for minimal conduction losses in high-current applications

278W maximum power dissipation at TC=25°C

195nC typical total gate charge

100% Rg and UIS tested for reliability

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy