Vishay SiR N channel-Channel MOSFET, 680 A, 30 V Enhancement, 8-Pin PowerPAK SO-8S SiRS4300DP

N

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  • Shipping from 14 September 2026
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RS Stock No.:
735-147
Mfr. Part No.:
SiRS4300DP
Brand:
Vishay
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Brand

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

680A

Maximum Drain Source Voltage Vds

30V

Series

SiR

Package Type

PowerPAK SO-8S

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.0004Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

180nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

278W

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

30V

Maximum Operating Temperature

150°C

Width

5mm

Standards/Approvals

RoHS

Length

6mm

Height

2mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N-Channel MOSFET rated for 30V drain-source voltage, engineered for ultra-low loss synchronous rectification in AI power server buck converters and high-current power delivery systems. It achieves exceptionally low on-resistance of 400μΩ at 10V gate drive to maximize efficiency in extreme high-density applications.

278W power dissipation rating

100% Rg and UIS tested construction

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