Vishay SiR N channel-Channel MOSFET, 265 A, 80 V Enhancement, 8-Pin PowerPAK SO-8S SiRS5800DP

N

This image is representative of the product range

Bulk discount available
View bulk pricing options

Subtotal (1 unit)*

$7.58

(exc. GST)

$8.34

(inc. GST)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 08 January 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
1 - 9$7.58
10 - 49$4.69
50 - 99$3.65
100 +$2.46

*price indicative

RS Stock No.:
735-133
Mfr. Part No.:
SiRS5800DP
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

265A

Maximum Drain Source Voltage Vds

80V

Series

SiR

Package Type

PowerPAK SO-8S

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0018Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

81nC

Maximum Power Dissipation Pd

240W

Forward Voltage Vf

80V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Width

5mm

Length

6mm

Height

2mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N-Channel MOSFET rated for 80V drain-source voltage, optimized for low-loss synchronous rectification in AI power server buck converters. It achieves industry-leading on-resistance of 1.8mΩ maximum at 10V gate drive for superior efficiency under high load conditions.

265A pulsed drain current rating

81nC typical total gate charge

52°C/W thermal resistance junction-to-case

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy