Vishay SiR870BDP Type N-Channel Single MOSFETs, 81 A, 100 V Enhancement, 8-Pin PowerPAK

N

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$3.33

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$3.66

(inc. GST)

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1 - 9$3.33
10 - 24$3.24
25 - 99$3.17
100 - 499$2.72
500 +$2.55

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RS Stock No.:
653-201
Mfr. Part No.:
SIR870BDP-T1-UE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

Single MOSFETs

Maximum Continuous Drain Current Id

81A

Maximum Drain Source Voltage Vds

100V

Series

SiR870BDP

Package Type

PowerPAK

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0061Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

100W

Maximum Gate Source Voltage Vgs

±20 V

Typical Gate Charge Qg @ Vgs

73nC

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Length

6.15mm

Width

5.15 mm

Height

0.61mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N-channel MOSFET designed for high-efficiency switching in Compact power systems. It supports up to 100 V drain-source voltage. Packaged in PowerPAK SO-8, it utilizes TrenchFET Gen IV technology to deliver low RDS(on), fast switching, and optimized thermal performance.

Pb Free

Halogen free

RoHS compliant

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