Vishay SiR870BDP Type N-Channel MOSFET, 81 A, 100 V Enhancement, 8-Pin SO-8

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Subtotal (1 reel of 3000 units)*

$5,760.00

(exc. GST)

$6,330.00

(inc. GST)

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Units
Per unit
Per Reel*
3000 - 3000$1.92$5,760.00
6000 - 9000$1.872$5,616.00
12000 +$1.843$5,529.00

*price indicative

RS Stock No.:
204-7223
Mfr. Part No.:
SiR870BDP-T1-RE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

81A

Maximum Drain Source Voltage Vds

100V

Package Type

SO-8

Series

SiR870BDP

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

6.1mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

110nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

100W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Width

1.12 mm

Length

5.26mm

Height

6.25mm

Standards/Approvals

No

Automotive Standard

No

The Vishay N-Channel 100 V (D-S) MOSFET has a very low RDS x Qg figure-of-merit (FOM) and is tuned for the lowest RDS x Qoss FOM.

TrenchFET Gen IV power MOSFET

100 % Rg and UIS tested

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