ROHM RD3 Type N-Channel Single MOSFETs, 100 V Enhancement, 3-Pin TO-252 RD3P04BBKHRBTL
- RS Stock No.:
- 646-544
- Mfr. Part No.:
- RD3P04BBKHRBTL
- Brand:
- ROHM
N
This image is representative of the product range
Bulk discount available
Subtotal (1 tape of 10 units)*
$14.64
(exc. GST)
$16.10
(inc. GST)
FREE delivery for orders over $60.00 ex GST
In Stock
- 90 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 10 - 90 | $1.464 | $14.64 |
| 100 - 490 | $1.288 | $12.88 |
| 500 - 990 | $1.156 | $11.56 |
| 1000 + | $0.914 | $9.14 |
*price indicative
- RS Stock No.:
- 646-544
- Mfr. Part No.:
- RD3P04BBKHRBTL
- Brand:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | RD3 | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 30mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 9.1nC | |
| Maximum Power Dissipation Pd | 53W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.50mm | |
| Width | 6.8 mm | |
| Standards/Approvals | RoHS, AEC-Q101 | |
| Height | 2.3mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Drain Source Voltage Vds 100V | ||
Series RD3 | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 30mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 9.1nC | ||
Maximum Power Dissipation Pd 53W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 10.50mm | ||
Width 6.8 mm | ||
Standards/Approvals RoHS, AEC-Q101 | ||
Height 2.3mm | ||
Automotive Standard AEC-Q101 | ||
The ROHM P channel 100 volt 36 ampere power metal oxide semiconductor field effect transistor features lead free plating and is restriction of hazardous substances compliant. It is one hundred percent avalanche tested.
Low on-resistance
AEC-Q101 qualified
Related links
- ROHM RD3 N-Channel MOSFET 40 V, 3-Pin DPAK RD3G08CBKHRBTL
- ROHM RD3 N-Channel MOSFET 60 V, 3-Pin DPAK RD3L04BBKHRBTL
- ROHM RD3 N-Channel MOSFET 60 V, 3-Pin DPAK RD3L04BBLHRBTL
- onsemi PowerTrench N-Channel MOSFET 100 V, 3-Pin DPAK FDD86102
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin D2PAK IRL540NSTRLPBF
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin TO-220AB IRL540NPBF
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin TO-220AB IRF540ZPBF
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin TO-220AB AUIRF540Z
