Infineon ISA Dual N-Channel Power Transistor, 7.9 A, 40 V Enhancement, 8-Pin PG-DSO-8 ISA250250N04LMDSXTMA1

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$16.36

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$18.00

(inc. GST)

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Per Pack*
20 - 180$0.818$16.36
200 - 480$0.777$15.54
500 - 980$0.72$14.40
1000 - 1980$0.663$13.26
2000 +$0.638$12.76

*price indicative

RS Stock No.:
348-910
Mfr. Part No.:
ISA250250N04LMDSXTMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Dual N

Product Type

Power Transistor

Maximum Continuous Drain Current Id

7.9A

Maximum Drain Source Voltage Vds

40V

Package Type

PG-DSO-8

Series

ISA

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

25mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

2.5W

Typical Gate Charge Qg @ Vgs

3.8nC

Forward Voltage Vf

1V

Maximum Operating Temperature

150°C

Standards/Approvals

IEC61249-2-21, JEDEC, RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The Infineon OptiMOS 3 Power Transistor is a dual N-channel, logic level MOSFET designed for high performance power applications. It features very low on-resistance (RDS(on)), which helps reduce conduction losses and increase overall system efficiency. Additionally, the transistor offers superior thermal resistance, ensuring better heat management and reliability in demanding conditions. This combination of features makes it ideal for applications requiring efficient power switching and thermal performance.

100% avalanche tested

Pb free lead plating and RoHS compliant

Halogen free according to IEC61249‑2‑21

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