Infineon ISA Dual N-Channel MOSFET, 9.6 A, 40 V Enhancement, 8-Pin PG-DSO-8 ISA170170N04LMDSXTMA1

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$20.66

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$22.72

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Per Pack*
20 - 180$1.033$20.66
200 - 480$0.982$19.64
500 - 980$0.909$18.18
1000 - 1980$0.837$16.74
2000 +$0.805$16.10

*price indicative

RS Stock No.:
348-912
Mfr. Part No.:
ISA170170N04LMDSXTMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Dual N

Maximum Continuous Drain Current Id

9.6A

Maximum Drain Source Voltage Vds

40V

Series

ISA

Package Type

PG-DSO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

17mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

2.5W

Typical Gate Charge Qg @ Vgs

6nC

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

JEDEC Standard

COO (Country of Origin):
CN
The Infineon OptiMOS 3 Power Transistor is a dual N-channel, logic level MOSFET designed for high performance power applications. It features very low on-resistance (RDS(on)), which helps reduce conduction losses and increase overall system efficiency. Additionally, the transistor offers superior thermal resistance, ensuring better heat management and reliability in demanding conditions. This combination of features makes it ideal for applications requiring efficient power switching and thermal performance.

100% avalanche tested

Pb free lead plating and RoHS compliant

Halogen free according to IEC61249‑2‑21

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