Bourns BIDW50N65T Single Diode IGBT, 50 A 650 V TO-247

View all IGBTs
Bulk discount available

Subtotal (1 pack of 2 units)*

$16.13

(exc. GST)

$17.744

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • 1,102 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
2 - 8$8.065$16.13
10 - 48$7.245$14.49
50 - 98$6.845$13.69
100 - 248$5.955$11.91
250 +$5.845$11.69

*price indicative

Packaging Options:
RS Stock No.:
253-3509
Mfr. Part No.:
BIDW50N65T
Brand:
Bourns
Find similar products by selecting one or more attributes.
Select all

Brand

Bourns

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

416 W

Number of Transistors

1

Configuration

Single Diode

Package Type

TO-247

The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. In addition, this structure provides a lower thermal resistance R(th).

650 V, 50 A, Low Collector-Emitter Saturation Voltage (VCE(sat))
Trench-Gate Field-Stop technology
Optimized for conduction
RoHS compliant

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


Related links