onsemi NXH350N100H4Q2F2S1G IGBT Module, 303 A 1000 V Q2PACK (Pb-Free/Halide-Free)

RS Stock No.:: 245-6976
Mfr. Part No.:: NXH350N100H4Q2F2S1G
Brand:: onsemi

onsemi NXH350N100H4Q2F2S1G IGBT Module, 303 A 1000 V Q2PACK (Pb-Free/Halide-Free)

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36 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each

$380.00

(exc. GST)

$418.00

(inc. GST)

Units	Per unit
1 - 1	$380.00
2 - 3	$379.46
4 - 7	$378.91
8 - 11	$378.36
12 +	$377.81

RS Stock No.:: 245-6976
Mfr. Part No.:: NXH350N100H4Q2F2S1G
Brand:: onsemi

Datasheet - NXH350N100H4Q2F2S1G

Attribute	Value
Maximum Continuous Collector Current	303 A
Maximum Collector Emitter Voltage	1000 V
Maximum Gate Emitter Voltage	±20V
Number of Transistors	4
Maximum Power Dissipation	592 W
Package Type	Q2PACK (Pb-Free/Halide-Free)

onsemi NXH350N100H4Q2F2S1G IGBT Module, 303 A 1000 V Q2PACK (Pb-Free/Halide-Free)

Si/SiC Hybrid Module - EliteSiC, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode, Q2 Package Solder pins

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