onsemi NXH350N100H4Q2F2P1G IGBT Module, 303 A 1000 V Q2PACK (Pb-Free/Halide-Free)

RS Stock No.:: 245-6974
Mfr. Part No.:: NXH350N100H4Q2F2P1G
Brand:: onsemi

onsemi NXH350N100H4Q2F2P1G IGBT Module, 303 A 1000 V Q2PACK (Pb-Free/Halide-Free)

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36 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each

$384.35

(exc. GST)

$422.79

(inc. GST)

Units	Per unit
1 - 1	$384.35
2 - 3	$383.80
4 - 7	$383.24
8 - 11	$382.68
12 +	$382.12

RS Stock No.:: 245-6974
Mfr. Part No.:: NXH350N100H4Q2F2P1G
Brand:: onsemi

Datasheet - NXH350N100H4Q2F2P1G

Attribute	Value
Maximum Continuous Collector Current	303 A
Maximum Collector Emitter Voltage	1000 V
Maximum Gate Emitter Voltage	±20V
Number of Transistors	4
Maximum Power Dissipation	592 W
Package Type	Q2PACK (Pb-Free/Halide-Free)

onsemi NXH350N100H4Q2F2P1G IGBT Module, 303 A 1000 V Q2PACK (Pb-Free/Halide-Free)

Si/SiC Hybrid Module - EliteSiC, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode, Q2 Package Press-fit pins

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