onsemi, Type N-Channel IGBT, 35 A 1200 V, 3-Pin TO-263, Surface

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Subtotal (1 reel of 800 units)*

$3,096.80

(exc. GST)

$3,406.40

(inc. GST)

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Units
Per unit
Per Reel*
800 - 800$3.871$3,096.80
1600 - 2400$3.774$3,019.20
3200 +$3.716$2,972.80

*price indicative

RS Stock No.:
124-1406
Mfr. Part No.:
HGT1S10N120BNST
Brand:
onsemi
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Brand

onsemi

Maximum Continuous Collector Current Ic

35A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

298W

Package Type

TO-263

Mount Type

Surface

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.45V

Maximum Operating Temperature

150°C

Series

NPT

Standards/Approvals

RoHS

Automotive Standard

No

Discrete IGBTs, 1000V and over, Fairchild Semiconductor


IGBT Discretes & Modules, Fairchild Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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