onsemi, Type N-Channel IGBT-Ultra Field Stop, 25 A 1200 V, 3-Pin TO-247, Through Hole

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Subtotal 8 units (supplied in a tube)*

$76.36

(exc. GST)

$84.00

(inc. GST)

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8 - 14$9.545
16 +$9.395

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Packaging Options:
RS Stock No.:
123-8830P
Mfr. Part No.:
NGTB25N120FL3WG
Brand:
onsemi
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Brand

onsemi

Maximum Continuous Collector Current Ic

25A

Product Type

IGBT-Ultra Field Stop

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

349W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Maximum Gate Emitter Voltage VGEO

±30 V

Maximum Collector Emitter Saturation Voltage VceSAT

1.7V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

20.8mm

Width

16.25 mm

Standards/Approvals

RoHS

Series

Field Stop

Automotive Standard

No

COO (Country of Origin):
CN

IGBT Discretes, ON Semiconductor


Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

IGBT Discretes, ON Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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