Infineon 64 kB SPI FRAM 8-Pin SOIC, FM25640B-G

RS Stock No.:: 188-5410
Mfr. Part No.:: FM25640B-G
Brand:: Infineon

Infineon 64 kB SPI FRAM 8-Pin SOIC, FM25640B-G

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Subtotal (1 tube of 97 units)*

$539.03

(exc. GST)

$592.96

(inc. GST)

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Temporarily out of stock

Shipping from 14 May 2027

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Units	Per unit	Per Tube*	Saving
97 - 97	$5.557	$539.03	-
194 - 291	$5.418	$525.55	2%
388 +	$5.334	$517.40	4%

*price indicative

RS Stock No.:: 188-5410
Mfr. Part No.:: FM25640B-G
Brand:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Memory Size	64kB
	Product Type	FRAM
	Organisation	8K x 8 bit
	Interface Type	SPI
	Data Bus Width	8bit
	Maximum Random Access Time	20ns
	Maximum Clock Frequency	20MHz
	Mount Type	Surface
	Package Type	SOIC
	Pin Count	8
	Height	1.38mm
	Length	4.97mm
	Standards/Approvals	No
	Width	3.98mm
	Maximum Operating Temperature	85°C
	Minimum Supply Voltage	4.5V
	Minimum Operating Temperature	-40°C
	Number of Bits per Word	8
	Maximum Supply Voltage	5.5V
	Number of Words	8K
	Automotive Standard	AEC-Q100

	Select all
	Brand Infineon
	Memory Size 64kB
	Product Type FRAM
	Organisation 8K x 8 bit
	Interface Type SPI
	Data Bus Width 8bit
	Maximum Random Access Time 20ns
	Maximum Clock Frequency 20MHz
	Mount Type Surface
	Package Type SOIC
	Pin Count 8
	Height 1.38mm
	Length 4.97mm
	Standards/Approvals No
	Width 3.98mm
	Maximum Operating Temperature 85°C
	Minimum Supply Voltage 4.5V
	Minimum Operating Temperature -40°C
	Number of Bits per Word 8
	Maximum Supply Voltage 5.5V
	Number of Words 8K
	Automotive Standard AEC-Q100

Datasheet FM25640B-G

COO (Country of Origin):: US

FRAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.