Infineon 64 kB SPI FRAM 8-Pin DFN, FM25CL64B-DG

RS Stock No.:: 125-4221
Mfr. Part No.:: FM25CL64B-DG
Brand:: Infineon

Infineon 64 kB SPI FRAM 8-Pin DFN, FM25CL64B-DG

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Subtotal (1 pack of 2 units)*

$9.49

(exc. GST)

$10.44

(inc. GST)

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Units	Per unit	Per Pack*
2 - 18	$4.745	$9.49
20 - 38	$4.63	$9.26
40 +	$4.565	$9.13

*price indicative

RS Stock No.:: 125-4221
Mfr. Part No.:: FM25CL64B-DG
Brand:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Memory Size	64kB
	Product Type	FRAM
	Organisation	8K x 8 bit
	Interface Type	SPI
	Data Bus Width	8bit
	Maximum Random Access Time	20ns
	Mount Type	Surface
	Maximum Clock Frequency	20MHz
	Package Type	DFN
	Pin Count	8
	Height	750μm
	Standards/Approvals	No
	Width	4mm
	Length	4.5mm
	Maximum Operating Temperature	85°C
	Automotive Standard	No
	Maximum Supply Voltage	3.65V
	Number of Bits per Word	8
	Minimum Operating Temperature	-40°C
	Minimum Supply Voltage	2.7V
	Number of Words	8K

	Select all
	Brand Infineon
	Memory Size 64kB
	Product Type FRAM
	Organisation 8K x 8 bit
	Interface Type SPI
	Data Bus Width 8bit
	Maximum Random Access Time 20ns
	Mount Type Surface
	Maximum Clock Frequency 20MHz
	Package Type DFN
	Pin Count 8
	Height 750μm
	Standards/Approvals No
	Width 4mm
	Length 4.5mm
	Maximum Operating Temperature 85°C
	Automotive Standard No
	Maximum Supply Voltage 3.65V
	Number of Bits per Word 8
	Minimum Operating Temperature -40°C
	Minimum Supply Voltage 2.7V
	Number of Words 8K

FM25CL64B Datasheet

FRAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.