Nexperia PBHV8215Z,115 Transistor, 2 A NPN, 150 V, 3-Pin SOT-223
- RS Stock No.:
- 165-8543
- Mfr. Part No.:
- PBHV8215Z,115
- Brand:
- Nexperia
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Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 165-8543
- Mfr. Part No.:
- PBHV8215Z,115
- Brand:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | Transistor | |
| Maximum DC Collector Current (Idc) | 2 A | |
| Transistor Polarity | NPN | |
| Maximum Collector Emitter Voltage (Vceo) | 150 V | |
| Pin Count | 3 | |
| Package Type | SOT-223 (SC-73) | |
| Automotive Standard | AEC-Q101 | |
| Height | 1.8 mm | |
| Length | 6.7 mm | |
| Maximum Collector Base Voltage (VCBO) | 350 V | |
| Maximum Emitter Base Voltage (VEBO) | 6 V | |
| Maximum Operating Temperature | 150 °C | |
| Maximum Power Dissipation (Pd) | 1.45 W | |
| Maximum Transition Frequency (ft) | 100 MHz | |
| Minimum DC Current Gain (hFE) | 100 | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Surface | |
| Series | PBHV8215Z | |
| Standards/Approvals | No | |
| Transistor Configuration | Single | |
| Width | 7.3 mm | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type Transistor | ||
Maximum DC Collector Current (Idc) 2 A | ||
Transistor Polarity NPN | ||
Maximum Collector Emitter Voltage (Vceo) 150 V | ||
Pin Count 3 | ||
Package Type SOT-223 (SC-73) | ||
Automotive Standard AEC-Q101 | ||
Height 1.8 mm | ||
Length 6.7 mm | ||
Maximum Collector Base Voltage (VCBO) 350 V | ||
Maximum Emitter Base Voltage (VEBO) 6 V | ||
Maximum Operating Temperature 150 °C | ||
Maximum Power Dissipation (Pd) 1.45 W | ||
Maximum Transition Frequency (ft) 100 MHz | ||
Minimum DC Current Gain (hFE) 100 | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Surface | ||
Series PBHV8215Z | ||
Standards/Approvals No | ||
Transistor Configuration Single | ||
Width 7.3 mm | ||
- COO (Country of Origin):
- CN
Low Saturation Voltage NPN Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in Compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
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