Infineon SRAM, CY14B108N-ZSP45XI- 8 MB
- RS Stock No.:
- 273-5253
- Mfr. Part No.:
- CY14B108N-ZSP45XI
- Brand:
- Infineon
This image is representative of the product range
Subtotal (1 tray of 108 units)*
$8,088.876
(exc. GST)
$8,897.796
(inc. GST)
FREE delivery for orders over $60.00 ex GST
Temporarily out of stock
- Shipping from 06 August 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tray* |
|---|---|---|
| 108 + | $74.897 | $8,088.88 |
*price indicative
- RS Stock No.:
- 273-5253
- Mfr. Part No.:
- CY14B108N-ZSP45XI
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | SRAM | |
| Memory Size | 8MB | |
| Number of Words | 512K | |
| Number of Bits per Word | 16 | |
| Maximum Random Access Time | 45ns | |
| Minimum Supply Voltage | 0.5V | |
| Maximum Supply Voltage | 4.1V | |
| Mount Type | Surface | |
| Minimum Operating Temperature | -40°C | |
| Package Type | TSOP | |
| Maximum Operating Temperature | 85°C | |
| Pin Count | 54 | |
| Series | CY14B108N | |
| Standards/Approvals | RoHS | |
| Height | 10.26mm | |
| Length | 22.52mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type SRAM | ||
Memory Size 8MB | ||
Number of Words 512K | ||
Number of Bits per Word 16 | ||
Maximum Random Access Time 45ns | ||
Minimum Supply Voltage 0.5V | ||
Maximum Supply Voltage 4.1V | ||
Mount Type Surface | ||
Minimum Operating Temperature -40°C | ||
Package Type TSOP | ||
Maximum Operating Temperature 85°C | ||
Pin Count 54 | ||
Series CY14B108N | ||
Standards/Approvals RoHS | ||
Height 10.26mm | ||
Length 22.52mm | ||
Automotive Standard No | ||
The Infineon SRAM is a fast static RAM with a non volatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512 K words of 16 bits each. The embedded non volatile elements incorporate Quantum Trap technology, producing the worlds most reliable non volatile memory. The SRAM provides infinite read and write cycles, while independent non volatile data resides in the highly reliable Quantum Trap cell. Data transfers from the SRAM to the non volatile elements takes place automatically at power down. On power up, data is restored to the SRAM from the non volatile memory. Both the STORE and RECALL operations are also available under software control.
Pb free
RoHS compliant
20 year data retention
Infinite read write and recall cycles
1 million STORE cycles to QuantumTrap
RECALL to SRAM initiated by software or power up