DiodesZetex Full Bridge 4 Type N, Type P-Channel Power MOSFET, 1.8 A, 60 V Enhancement, 8-Pin

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Subtotal (1 reel of 1000 units)*

$1,943.00

(exc. GST)

$2,137.00

(inc. GST)

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  • 1,000 unit(s) ready to ship from another location
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Per Reel*
1000 - 1000$1.943$1,943.00
2000 - 3000$1.896$1,896.00
4000 +$1.851$1,851.00

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RS Stock No.:
922-7888
Mfr. Part No.:
ZXMHC6A07T8TA
Brand:
DiodesZetex
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Brand

DiodesZetex

Product Type

Power MOSFET

Channel Type

Type N, Type P

Maximum Continuous Drain Current Id

1.8A

Maximum Drain Source Voltage Vds

60V

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

425mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

150°C

Typical Gate Charge Qg @ Vgs

3.2nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.85V

Maximum Power Dissipation Pd

1.7W

Transistor Configuration

Full Bridge

Maximum Operating Temperature

-55°C

Standards/Approvals

J-STD-020, RoHS, AEC-Q101, MIL-STD-202, UL 94V-0

Width

3.7 mm

Height

1.6mm

Length

6.7mm

Number of Elements per Chip

4

Automotive Standard

No

COO (Country of Origin):
DE

Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.


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