DiodesZetex Full Bridge 4 Type N, Type P-Channel Power MOSFET, 1.8 A, 60 V Enhancement, 8-Pin SOIC

This image is representative of the product range

Bulk discount available

Subtotal (1 reel of 2500 units)*

$2,437.50

(exc. GST)

$2,680.00

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • 5,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
2500 - 2500$0.975$2,437.50
5000 - 7500$0.95$2,375.00
10000 +$0.936$2,340.00

*price indicative

RS Stock No.:
169-0719
Mfr. Part No.:
ZXMHC6A07N8TC
Brand:
DiodesZetex
Find similar products by selecting one or more attributes.
Select all

Brand

DiodesZetex

Channel Type

Type N, Type P

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

1.8A

Maximum Drain Source Voltage Vds

60V

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

350mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

3.2nC

Minimum Operating Temperature

150°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

1.36W

Forward Voltage Vf

0.8V

Maximum Operating Temperature

-55°C

Transistor Configuration

Full Bridge

Height

1.5mm

Width

4 mm

Standards/Approvals

UL 94V-0, AEC-Q101, J-STD-020, RoHS, MIL-STD-202

Length

5mm

Number of Elements per Chip

4

Automotive Standard

No

COO (Country of Origin):
CN

Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.


MOSFET Transistors, Diodes Inc.


Related links