IXYS HiperFET, Polar Type N-Channel MOSFET, 61 A, 500 V Enhancement, 4-Pin SOT-227
- RS Stock No.:
- 920-0789
- Mfr. Part No.:
- IXFN64N50P
- Brand:
- IXYS
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 10 units)*
$401.86
(exc. GST)
$442.05
(inc. GST)
FREE delivery for orders over $60.00 ex GST
In Stock
- 10 unit(s) ready to ship from another location
- Plus 20 unit(s) shipping from 03 June 2026
- Plus 10 unit(s) shipping from 24 May 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 10 - 10 | $40.186 | $401.86 |
| 20 - 30 | $39.897 | $398.97 |
| 40 + | $39.237 | $392.37 |
*price indicative
- RS Stock No.:
- 920-0789
- Mfr. Part No.:
- IXFN64N50P
- Brand:
- IXYS
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 61A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | HiperFET, Polar | |
| Package Type | SOT-227 | |
| Mount Type | Panel | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 85mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 150nC | |
| Forward Voltage Vf | 1.5V | |
| Maximum Power Dissipation Pd | 700W | |
| Maximum Operating Temperature | 150°C | |
| Length | 38.23mm | |
| Standards/Approvals | No | |
| Height | 9.6mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 61A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series HiperFET, Polar | ||
Package Type SOT-227 | ||
Mount Type Panel | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 85mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 150nC | ||
Forward Voltage Vf 1.5V | ||
Maximum Power Dissipation Pd 700W | ||
Maximum Operating Temperature 150°C | ||
Length 38.23mm | ||
Standards/Approvals No | ||
Height 9.6mm | ||
Automotive Standard No | ||
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS