IXYS Type N-Channel MOSFET, 115 A, 300 V Enhancement, 4-Pin SOT-227

This image is representative of the product range

Bulk discount available

Subtotal (1 tube of 10 units)*

$506.77

(exc. GST)

$557.45

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • Plus 40 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tube*
10 - 10$50.677$506.77
20 - 30$50.327$503.27
40 +$49.489$494.89

*price indicative

RS Stock No.:
920-0748
Mfr. Part No.:
IXFN140N30P
Brand:
IXYS
Find similar products by selecting one or more attributes.
Select all

Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

115A

Maximum Drain Source Voltage Vds

300V

Package Type

SOT-227

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

24mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

185nC

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

700W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Height

9.6mm

Length

38.2mm

Standards/Approvals

No

Width

25.07 mm

Automotive Standard

No

COO (Country of Origin):
US

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series


N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

Related links