N-Channel MOSFET, 53 A, 800 V, 4-Pin SOT-227 IXYS IXFN60N80P

RS Stock No.:: 168-4494
Mfr. Part No.:: IXFN60N80P
Brand:: IXYS

N-Channel MOSFET, 53 A, 800 V, 4-Pin SOT-227 IXYS IXFN60N80P

This image is representative of the product range

On back order for despatch 29/03/2025, delivery within 10 working days from despatch date.

Price (ex. GST) Each (In a Tube of 10)

$52.952

(exc. GST)

$58.247

(inc. GST)

Units	Per unit	Per Tube*
10 - 40	$52.952	$529.52
50 +	$47.657	$476.57

*price indicative

RS Stock No.:: 168-4494
Mfr. Part No.:: IXFN60N80P
Brand:: IXYS

Technical data sheets

Legislation and Compliance

Product Details

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	53 A
Maximum Drain Source Voltage	800 V
Series	HiperFET, Polar
Package Type	SOT-227
Mounting Type	Screw Mount
Pin Count	4
Maximum Drain Source Resistance	140 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	1.04 kW
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Transistor Material	Si
Length	38.23mm
Maximum Operating Temperature	+150 °C
Width	25.42mm
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	250 nC @ 10 V
Height	9.6mm
Minimum Operating Temperature	-55 °C