N-Channel MOSFET, 115 A, 200 V, 4-Pin SOT-227 IXYS IXFN140N20P

RS Stock No.:: 920-0735
Mfr. Part No.:: IXFN140N20P
Brand:: IXYS

N-Channel MOSFET, 115 A, 200 V, 4-Pin SOT-227 IXYS IXFN140N20P

Available for back order.

Price (ex. GST) Each (In a Tube of 10)

$39.256

(exc. GST)

$43.182

(inc. GST)

Units	Per unit	Per Tube*
10 - 40	$39.256	$392.56
50 +	$35.331	$353.31

*price indicative

RS Stock No.:: 920-0735
Mfr. Part No.:: IXFN140N20P
Brand:: IXYS

Technical data sheets

Legislation and Compliance

Product Details

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	115 A
Maximum Drain Source Voltage	200 V
Package Type	SOT-227B
Series	HiperFET, Polar
Mounting Type	Screw Mount
Pin Count	4
Maximum Drain Source Resistance	18 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	680 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Width	25.42mm
Maximum Operating Temperature	+175 °C
Length	38.23mm
Typical Gate Charge @ Vgs	240 nC @ 10 V
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Height	9.6mm