N-Channel MOSFET, 2.7 A, 60 V, 3-Pin SOT-23 Infineon IRLML0060TRPBF

RS Stock No.:: 913-4048
Mfr. Part No.:: IRLML0060TRPBF
Brand:: Infineon

N-Channel MOSFET, 2.7 A, 60 V, 3-Pin SOT-23 Infineon IRLML0060TRPBF

6000 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (On a Reel of 3000)

$0.215

(exc. GST)

$0.237

(inc. GST)

Units	Per unit	Per Reel*
3000 - 12000	$0.215	$645.00
15000 +	$0.194	$582.00

*price indicative

RS Stock No.:: 913-4048
Mfr. Part No.:: IRLML0060TRPBF
Brand:: Infineon

Technical data sheets

Legislation and Compliance

Product Details

N-Channel Power MOSFET 60V to 80V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	2.7 A
Maximum Drain Source Voltage	60 V
Series	HEXFET
Package Type	SOT-23
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	92 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.5V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	1.25 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-16 V, +16 V
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Width	1.4mm
Transistor Material	Si
Length	3.04mm
Typical Gate Charge @ Vgs	2.5 nC @ 4.5 V
Height	1.02mm
Minimum Operating Temperature	-55 °C