N-Channel MOSFET, 45 A, 100 V, 3-Pin TO-220 FP Infineon IPA086N10N3GXKSA1

RS Stock No.:: 892-2125
Mfr. Part No.:: IPA086N10N3GXKSA1
Brand:: Infineon

N-Channel MOSFET, 45 A, 100 V, 3-Pin TO-220 FP Infineon IPA086N10N3GXKSA1

This image is representative of the product range

1875 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (In a Pack of 5)

$2.686

(exc. GST)

$2.955

(inc. GST)

Units	Per unit	Per Pack*
5 - 10	$2.686	$13.43
15 - 20	$2.644	$13.22
25 +	$2.594	$12.97

*price indicative

RS Stock No.:: 892-2125
Mfr. Part No.:: IPA086N10N3GXKSA1
Brand:: Infineon

Technical data sheets

Legislation and Compliance

Product Details

Infineon OptiMOS™3 Power MOSFETs, 100V and over

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	45 A
Maximum Drain Source Voltage	100 V
Series	OptiMOS™ 3
Package Type	TO-220 FP
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	15.4 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.5V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	37.5 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	42 nC @ 10 V
Number of Elements per Chip	1
Width	4.85mm
Maximum Operating Temperature	+175 °C
Length	10.65mm
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	16.15mm
Forward Diode Voltage	1.2V