Infineon OptiMOS 3 Type N-Channel MOSFET, 45 A, 100 V Enhancement, 3-Pin TO-220

RS Stock No.:: 145-8705
Mfr. Part No.:: IPA086N10N3GXKSA1
Brand:: Infineon

Infineon OptiMOS 3 Type N-Channel MOSFET, 45 A, 100 V Enhancement, 3-Pin TO-220

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Subtotal (1 tube of 50 units)*

$93.60

(exc. GST)

$102.95

(inc. GST)

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In Stock

1,700 unit(s) ready to ship from another location

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Units	Per unit	Per Tube*
50 - 200	$1.872	$93.60
250 +	$1.684	$84.20

*price indicative

RS Stock No.:: 145-8705
Mfr. Part No.:: IPA086N10N3GXKSA1
Brand:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	45A
	Maximum Drain Source Voltage Vds	100V
	Series	OptiMOS 3
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	15.4mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	37.5W
	Typical Gate Charge Qg @ Vgs	42nC
	Maximum Operating Temperature	175°C
	Length	10.65mm
	Height	16.15mm
	Standards/Approvals	No
	Width	4.85 mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 45A
	Maximum Drain Source Voltage Vds 100V
	Series OptiMOS 3
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 15.4mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 37.5W
	Typical Gate Charge Qg @ Vgs 42nC
	Maximum Operating Temperature 175°C
	Length 10.65mm
	Height 16.15mm
	Standards/Approvals No
	Width 4.85 mm
	Automotive Standard No

COO (Country of Origin):: CN

Infineon OptiMOS™ 3 Series MOSFET, 45A Maximum Continuous Drain Current, 37.5W Maximum Power Dissipation - IPA086N10N3GXKSA1

This MOSFET is engineered for high-performance applications in automation, electronics, and electrical engineering. As a power transistor, it enhances power management by providing excellent efficiency and reliability. Its Durable design supports high-frequency switching, making it suitable for environments where strong performance is essential.

Features & Benefits

• N-channel configuration optimises current management

• Low on-resistance enhances overall system efficiency

• Operates at temperatures up to +175°C for adaptable applications

• Fully isolated package improves safety during operation

• Compliant with RoHS and halogen-free standards for eco-friendly use

Applications

• Ideal for high-frequency switching in electronic devices

• Employed in synchronous rectification to maximise efficiency

• Suitable for requiring high current handling

• Effective in temperature-sensitive environments due to robust thermal performance

What is the significance of the low on-resistance feature in this device?

The low on-resistance feature reduces power losses during operation, leading to improved efficiency in power management circuits. This results in less heat generation and enhanced overall performance.

Can this MOSFET be used in automotive applications?

Yes, it is appropriate for automotive applications as it meets high-temperature performance requirements and provides dependable operation under varying load conditions.

How does the gate threshold voltage influence circuit function?

The gate threshold voltage determines when the MOSFET begins conducting. In this case, it ranges from 2V to 3.5V, ensuring activation occurs only under suitable voltage levels, thereby protecting other components.

What types of circuits are most compatible with this power transistor?

This power transistor is compatible with high-frequency switching circuits and synchronous rectification applications, offering versatility for various electronic designs.

How should the MOSFET be mounted for optimal performance?

The MOSFET should be mounted using the through-hole method to ensure secure connections and effective heat dissipation based on its thermal resistance specifications.