IXYS GigaMOS, HiperFET N-Channel MOSFET, 550 A, 55 V Enhancement, 24-Pin SMPD MMIX1T550N055T2

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Subtotal (1 unit)*

$83.90

(exc. GST)

$92.29

(inc. GST)

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Units
Per unit
1 - 4$83.90
5 - 9$83.50
10 +$82.77

*price indicative

Packaging Options:
RS Stock No.:
875-2500
Mfr. Part No.:
MMIX1T550N055T2
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

550A

Maximum Drain Source Voltage Vds

55V

Series

GigaMOS, HiperFET

Package Type

SMPD

Mount Type

Surface

Pin Count

24

Maximum Drain Source Resistance Rds

1.3mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

-20V, +20V

Maximum Power Dissipation Pd

830W

Typical Gate Charge Qg @ Vgs

595nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

23.25mm

Standards/Approvals

No

Length

25.25mm

Height

5.7mm

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series


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