IXYS Single GigaMOS, HiperFET 1 Type N-Channel MOSFET, 132 A, 250 V Enhancement, 24-Pin SMPD MMIX1F180N25T

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Subtotal (1 tube of 20 units)*

$1,140.68

(exc. GST)

$1,254.74

(inc. GST)

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Units
Per unit
Per Tube*
20 - 20$57.034$1,140.68
40 - 60$55.607$1,112.14
80 +$54.751$1,095.02

*price indicative

RS Stock No.:
146-1770
Mfr. Part No.:
MMIX1F180N25T
Brand:
IXYS
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Brand

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

132A

Maximum Drain Source Voltage Vds

250V

Package Type

SMPD

Series

GigaMOS, HiperFET

Mount Type

Surface

Pin Count

24

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

570W

Forward Voltage Vf

1.3V

Maximum Operating Temperature

150°C

Transistor Configuration

Single

Height

5.7mm

Width

23.25mm

Length

25.25mm

Number of Elements per Chip

1

COO (Country of Origin):
DE

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series


MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

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