IXYS GigaMOS, HiperFET Type N-Channel MOSFET, 500 A, 75 V Enhancement, 24-Pin SMPD

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Subtotal (1 tube of 20 units)*

$576.96

(exc. GST)

$634.66

(inc. GST)

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  • Shipping from 30 December 2026
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Units
Per unit
Per Tube*
20 - 80$28.848$576.96
100 +$25.964$519.28

*price indicative

RS Stock No.:
168-4790
Mfr. Part No.:
MMIX1F520N075T2
Brand:
IXYS
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Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

500A

Maximum Drain Source Voltage Vds

75V

Series

GigaMOS, HiperFET

Package Type

SMPD

Mount Type

Surface

Pin Count

24

Maximum Drain Source Resistance Rds

1.6mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

545nC

Forward Voltage Vf

1.25V

Maximum Power Dissipation Pd

830W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

5.7mm

Length

25.25mm

Standards/Approvals

No

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series


MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

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