Infineon OptiMOS-T2 Type N-Channel MOSFET, 90 A, 100 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 2500 units)*

$3,732.50

(exc. GST)

$4,105.00

(inc. GST)

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  • 2,500 unit(s) ready to ship from another location
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Units
Per unit
Per Reel*
2500 - 10000$1.493$3,732.50
12500 +$1.344$3,360.00

*price indicative

RS Stock No.:
218-3054
Mfr. Part No.:
IPD90N10S4L06ATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

90A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-252

Series

OptiMOS-T2

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

6.6mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

136W

Typical Gate Charge Qg @ Vgs

75nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

2.41mm

Length

6.73mm

Automotive Standard

AEC-Q101

The Infineon OptiMOS™-T2 series N-channel power MOSFET. It has low switching and conduction power losses for high thermal efficiency.

N-channel - Enhancement mode

MSL1 up to 260°C peak reflow

175°C operating temperature

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