N-Channel MOSFET, 57 A, 30 V, 8-Pin TDSON Infineon BSC052N03LSATMA1
- RS Stock No.:
- 827-5344
- Mfr. Part No.:
- BSC052N03LSATMA1
- Brand:
- Infineon
Subtotal (1 pack of 25 units)**
$28.03
(exc. GST)
$30.83
(inc. GST)
4100 In Global stock for delivery within 10 working day(s)*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over $80.00 ex GST
Units | Per unit | Per Pack** |
---|---|---|
25 + | $1.121 | $28.025 |
**price indicative
- RS Stock No.:
- 827-5344
- Mfr. Part No.:
- BSC052N03LSATMA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 57 A | |
Maximum Drain Source Voltage | 30 V | |
Series | OptiMOS™ | |
Package Type | TDSON | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 7.2 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2V | |
Minimum Gate Threshold Voltage | 1.2V | |
Maximum Power Dissipation | 28 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Width | 5.35mm | |
Typical Gate Charge @ Vgs | 12 nC @ 10 V | |
Length | 6.1mm | |
Maximum Operating Temperature | +150 °C | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Minimum Operating Temperature | -55 °C | |
Height | 1.1mm | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 57 A | ||
Maximum Drain Source Voltage 30 V | ||
Series OptiMOS™ | ||
Package Type TDSON | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 7.2 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 28 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 5.35mm | ||
Typical Gate Charge @ Vgs 12 nC @ 10 V | ||
Length 6.1mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 1.1mm | ||
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