Infineon OptiMOS T2 N-Channel MOSFET, 80 A, 60 V, 3-Pin TO-220 IPP80N06S4L-05
- RS Stock No.:
- 826-9339P
- Mfr. Part No.:
- IPP80N06S4L-05
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal 40 units (supplied in a tube)*
$59.60
(exc. GST)
$65.60
(inc. GST)
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Units | Per unit |
|---|---|
| 40 - 80 | $1.49 |
| 100 - 180 | $1.475 |
| 200 - 380 | $1.461 |
| 400 + | $1.401 |
*price indicative
- RS Stock No.:
- 826-9339P
- Mfr. Part No.:
- IPP80N06S4L-05
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 80 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | TO-220 | |
| Series | OptiMOS T2 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 8.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 107 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -16 V, +16 V | |
| Maximum Operating Temperature | +175 °C | |
| Width | 4.57mm | |
| Typical Gate Charge @ Vgs | 83 nC @ 10 V | |
| Length | 10.36mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Height | 15.95mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 80 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type TO-220 | ||
Series OptiMOS T2 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 8.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 107 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Maximum Operating Temperature +175 °C | ||
Width 4.57mm | ||
Typical Gate Charge @ Vgs 83 nC @ 10 V | ||
Length 10.36mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Height 15.95mm | ||
Minimum Operating Temperature -55 °C | ||
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