N-Channel MOSFET, 100 A, 40 V, 8-Pin TDSON Infineon BSC035N04LSGATMA1

RS Stock No.:: 165-6880
Mfr. Part No.:: BSC035N04LSGATMA1
Brand:: Infineon

N-Channel MOSFET, 100 A, 40 V, 8-Pin TDSON Infineon BSC035N04LSGATMA1

This image is representative of the product range

8960 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (On a Reel of 5000)

$0.792

(exc. GST)

$0.871

(inc. GST)

Units	Per unit	Per Reel*
5000 - 20000	$0.792	$3,960.00
25000 +	$0.712	$3,560.00

*price indicative

RS Stock No.:: 165-6880
Mfr. Part No.:: BSC035N04LSGATMA1
Brand:: Infineon

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

Infineon OptiMOS™3 Power MOSFETs, up to 40V

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	100 A
Maximum Drain Source Voltage	40 V
Package Type	TDSON
Series	OptiMOS™ 3
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	5.3 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	69 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Width	6.35mm
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	48 nC @ 10 V
Length	5.35mm
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	1.1mm