N-Channel MOSFET, 90 A, 60 V, 3-Pin D2PAK Infineon IPB034N06L3GATMA1

RS Stock No.:: 165-8270
Mfr. Part No.:: IPB034N06L3GATMA1
Brand:: Infineon

N-Channel MOSFET, 90 A, 60 V, 3-Pin D2PAK Infineon IPB034N06L3GATMA1

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3925 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (On a Reel of 1000)

$1.614

(exc. GST)

$1.775

(inc. GST)

Units	Per unit	Per Reel*
1000 - 4000	$1.614	$1,614.00
5000 +	$1.453	$1,453.00

*price indicative

RS Stock No.:: 165-8270
Mfr. Part No.:: IPB034N06L3GATMA1
Brand:: Infineon

Technical data sheets

Legislation and Compliance

RoHS Status: Exempt

COO (Country of Origin):: CN

Product Details

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	90 A
Maximum Drain Source Voltage	60 V
Series	OptiMOS™ 3
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	3.7 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.2V
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	167 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Length	10.31mm
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Width	9.45mm
Typical Gate Charge @ Vgs	59 nC @ 10 V
Height	4.57mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.2V