DiodesZetex Full Bridge 4 Type P, Type N-Channel MOSFET, 7.8 A, 30 V Enhancement, 8-Pin SOIC DMHC3025LSD-13
- RS Stock No.:
- 823-3211
- Mfr. Part No.:
- DMHC3025LSD-13
- Brand:
- DiodesZetex
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Subtotal (1 pack of 10 units)*
$12.64
(exc. GST)
$13.90
(inc. GST)
FREE delivery for orders over $60.00 ex GST
Temporarily out of stock
- 24,360 unit(s) shipping from 12 March 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 620 | $1.264 | $12.64 |
| 630 - 1240 | $1.234 | $12.34 |
| 1250 + | $1.215 | $12.15 |
*price indicative
- RS Stock No.:
- 823-3211
- Mfr. Part No.:
- DMHC3025LSD-13
- Brand:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P, Type N | |
| Maximum Continuous Drain Current Id | 7.8A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | 150°C | |
| Maximum Power Dissipation Pd | 1.5W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.7V | |
| Typical Gate Charge Qg @ Vgs | 5.4nC | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Full Bridge | |
| Width | 3.95 mm | |
| Length | 4.95mm | |
| Standards/Approvals | UL 94V-0, MIL-STD-202, RoHS, AEC-Q101, J-STD-020 | |
| Height | 1.5mm | |
| Number of Elements per Chip | 4 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P, Type N | ||
Maximum Continuous Drain Current Id 7.8A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature 150°C | ||
Maximum Power Dissipation Pd 1.5W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.7V | ||
Typical Gate Charge Qg @ Vgs 5.4nC | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Full Bridge | ||
Width 3.95 mm | ||
Length 4.95mm | ||
Standards/Approvals UL 94V-0, MIL-STD-202, RoHS, AEC-Q101, J-STD-020 | ||
Height 1.5mm | ||
Number of Elements per Chip 4 | ||
Automotive Standard AEC-Q101 | ||
Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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