N-Channel MOSFET, 3.6 A, 600 V, 3-Pin D2PAK Vishay SIHFBC30AS-GE3

RS Stock No.:: 815-2698
Mfr. Part No.:: SIHFBC30AS-GE3
Brand:: Vishay

N-Channel MOSFET, 3.6 A, 600 V, 3-Pin D2PAK Vishay SIHFBC30AS-GE3

This image is representative of the product range

On back order for despatch 06/11/2024, delivery within 10 working days from despatch date.

Price (ex. GST) Each (In a Pack of 10)

$2.698

(exc. GST)

$2.968

(inc. GST)

Units	Per unit	Per Pack*
10 - 10	$2.698	$26.98
20 - 20	$2.68	$26.80
30 +	$2.654	$26.54

*price indicative

RS Stock No.:: 815-2698
Mfr. Part No.:: SIHFBC30AS-GE3
Brand:: Vishay

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Vishay Semiconductor

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	3.6 A
Maximum Drain Source Voltage	600 V
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	2.2 Ω
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	74 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Number of Elements per Chip	1
Length	10.67mm
Transistor Material	Si
Width	9.65mm
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	23 nC @ 10 V
Minimum Operating Temperature	-55 °C
Height	4.83mm