N-Channel MOSFET, 3.6 A, 600 V, 3-Pin D2PAK Vishay SIHFBC30AS-GE3
- RS Stock No.:
- 815-2698
- Mfr. Part No.:
- SIHFBC30AS-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 10 units)**
$33.55
(exc. GST)
$36.91
(inc. GST)
On back order for despatch 20/06/2025, delivery within 10 working days from despatch date.*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over $80.00 ex GST
Units | Per unit | Per Pack** |
---|---|---|
10 - 10 | $3.355 | $33.55 |
20 - 20 | $3.333 | $33.33 |
30 + | $3.301 | $33.01 |
**price indicative
- RS Stock No.:
- 815-2698
- Mfr. Part No.:
- SIHFBC30AS-GE3
- Brand:
- Vishay
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Vishay | |
Channel Type | N | |
Maximum Continuous Drain Current | 3.6 A | |
Maximum Drain Source Voltage | 600 V | |
Package Type | D2PAK (TO-263) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 2.2 Ω | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 74 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -30 V, +30 V | |
Maximum Operating Temperature | +150 °C | |
Typical Gate Charge @ Vgs | 23 nC @ 10 V | |
Number of Elements per Chip | 1 | |
Length | 10.67mm | |
Transistor Material | Si | |
Width | 9.65mm | |
Height | 4.83mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 3.6 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2.2 Ω | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 74 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 23 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Length 10.67mm | ||
Transistor Material Si | ||
Width 9.65mm | ||
Height 4.83mm | ||
Minimum Operating Temperature -55 °C | ||
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