N-Channel MOSFET, 3.6 A, 30 V, 3-Pin SOT-23 Vishay SI2300DS-T1-GE3

RS Stock No.:: 180-7267
Mfr. Part No.:: SI2300DS-T1-GE3
Brand:: Vishay

N-Channel MOSFET, 3.6 A, 30 V, 3-Pin SOT-23 Vishay SI2300DS-T1-GE3

3000 In Global stock for delivery within 10 working day(s)

Added

Price (ex. GST) Each (On a Reel of 3000)

$0.289

(exc. GST)

$0.318

(inc. GST)

Units	Per unit	Per Reel*
3000 - 3000	$0.289	$867.00
6000 - 9000	$0.282	$846.00
12000 +	$0.278	$834.00
*price indicative

RS Stock No.:: 180-7267
Mfr. Part No.:: SI2300DS-T1-GE3
Brand:: Vishay

Technical data sheets

Datasheet

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

Vishay MOSFET

The Vishay surface mount N-channel MOSFET is a new age product with a drain-source resistance of 68mohm at a gate-source voltage of 4.5V. It has a maximum gate-source voltage of 12V and drain-source voltage of 30V. The MOSFET has a minimum and a maximum driving voltage of 2.5V and 4.5V respectively. It has continuous drain current of 3.6A and maximum power dissipation of 1.7W. MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET

Applications

• DC-DC converter for portable devices
• Load switch

Certifications

• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC 61249-2-21
• Rg tested

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	3.6 A
Maximum Drain Source Voltage	30 V
Series	TrenchFET
Package Type	SOT-23
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	0.068 O
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1.5V
Number of Elements per Chip	1