Vishay TrenchFET Gen III Type P-Channel MOSFET, 127.5 A, 20 V Enhancement, 8-Pin PowerPAK 1212 SiSS63DN-T1-GE3

This image is representative of the product range

Currently unavailable
Sorry, we don't know when this will be back in stock.
RS Stock No.:
200-6848
Mfr. Part No.:
SiSS63DN-T1-GE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

127.5A

Maximum Drain Source Voltage Vds

20V

Series

TrenchFET Gen III

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

7mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

236nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1.2V

Maximum Gate Source Voltage Vgs

12V

Maximum Power Dissipation Pd

65.8W

Maximum Operating Temperature

150°C

Length

3.3mm

Standards/Approvals

No

Width

3.3mm

Height

3.3mm

Automotive Standard

No

The Vishay SiSS63DN-T1-GE3 is a P-channel 20V (D-S) MOSFET.

TrenchFET Gen III p-channel power MOSFET

Leadership RDS(on) in compact and thermally enhanced package

100 % Rg and UIS tested

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy