Vishay TrenchFET Type N-Channel MOSFET, 58 A, 30 V Enhancement, 8-Pin SO-8 SIRA14DP-T1-GE3

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Subtotal (1 tape of 10 units)*

$9.46

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$10.41

(inc. GST)

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10 - 740$0.946$9.46
750 - 1490$0.929$9.29
1500 +$0.909$9.09

*price indicative

Packaging Options:
RS Stock No.:
787-9389
Mfr. Part No.:
SIRA14DP-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

58A

Maximum Drain Source Voltage Vds

30V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

8.5mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

19.4nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

31.2W

Forward Voltage Vf

0.76V

Maximum Operating Temperature

150°C

Width

5.26 mm

Length

6.25mm

Height

1.12mm

Standards/Approvals

No

Automotive Standard

No

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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