N-Channel MOSFET, 100 A, 500 V, 3-Pin TO-264 onsemi FDL100N50F

RS Stock No.:: 759-9128
Mfr. Part No.:: FDL100N50F
Brand:: onsemi

N-Channel MOSFET, 100 A, 500 V, 3-Pin TO-264 onsemi FDL100N50F

This image is representative of the product range

2 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each

$28.63

(exc. GST)

$31.49

(inc. GST)

Units	Per unit
1 - 6	$28.63
7 - 34	$28.36
35 +	$23.33

RS Stock No.:: 759-9128
Mfr. Part No.:: FDL100N50F
Brand:: onsemi

Technical data sheets

Legislation and Compliance

Product Details

UniFET™ N-Channel MOSFET, Fairchild Semiconductor

UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	100 A
Maximum Drain Source Voltage	500 V
Series	UniFET
Package Type	TO-264
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	55 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	3V
Maximum Power Dissipation	2.5 kW
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	238 nC @ 10 V
Width	5mm
Length	20mm
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	20mm