N-Channel MOSFET, 21 mA, 600 V Depletion, 3-Pin SOT-23 Infineon BSS126H6327XTSA2

RS Stock No.:: 753-2838
Mfr. Part No.:: BSS126H6327XTSA2
Brand:: Infineon

N-Channel MOSFET, 21 mA, 600 V Depletion, 3-Pin SOT-23 Infineon BSS126H6327XTSA2

This image is representative of the product range

600 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (In a Pack of 25)

$0.665

(exc. GST)

$0.731

(inc. GST)

Units	Per unit	Per Pack*
25 +	$0.665	$16.625

*price indicative

RS Stock No.:: 753-2838
Mfr. Part No.:: BSS126H6327XTSA2
Brand:: Infineon

Technical data sheets

Legislation and Compliance

Product Details

Infineon SIPMOS® N-Channel MOSFETs

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	21 mA
Maximum Drain Source Voltage	600 V
Series	SIPMOS®
Package Type	SOT-23
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	700 Ω
Channel Mode	Depletion
Maximum Gate Threshold Voltage	1.6V
Minimum Gate Threshold Voltage	2.7V
Maximum Power Dissipation	500 mW
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	1.3mm
Length	2.9mm
Number of Elements per Chip	1
Transistor Material	Si
Typical Gate Charge @ Vgs	1.4 nC @ 5 V
Maximum Operating Temperature	+150 °C
Height	1mm
Minimum Operating Temperature	-55 °C