N-Channel MOSFET, 21 mA, 600 V, 3-Pin SOT-23 Infineon BSS127H6327XTSA2

RS Stock No.:: 165-7534
Mfr. Part No.:: BSS127H6327XTSA2
Brand:: Infineon

N-Channel MOSFET, 21 mA, 600 V, 3-Pin SOT-23 Infineon BSS127H6327XTSA2

This image is representative of the product range

On back order for despatch 09/07/2025, delivery within 10 working days from despatch date.

Price (ex. GST) Each (On a Reel of 3000)

$0.154

(exc. GST)

$0.169

(inc. GST)

Units	Per unit	Per Reel*
3000 - 12000	$0.154	$462.00
15000 +	$0.139	$417.00

*price indicative

RS Stock No.:: 165-7534
Mfr. Part No.:: BSS127H6327XTSA2
Brand:: Infineon

Technical data sheets

Legislation and Compliance

Product Details

Infineon SIPMOS® N-Channel MOSFETs

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	21 mA
Maximum Drain Source Voltage	600 V
Package Type	SOT-23
Series	SIPMOS®
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	600 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.6V
Minimum Gate Threshold Voltage	1.4V
Maximum Power Dissipation	500 mW
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Length	2.9mm
Transistor Material	Si
Typical Gate Charge @ Vgs	0.65 nC @ 10 V
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Width	1.3mm
Height	1mm
Minimum Operating Temperature	-55 °C