N-Channel MOSFET, 120 mA, 600 V Depletion, 3-Pin SOT-223 Infineon BSP135H6327XTSA1

RS Stock No.:: 354-5708
Mfr. Part No.:: BSP135H6327XTSA1
Brand:: Infineon

N-Channel MOSFET, 120 mA, 600 V Depletion, 3-Pin SOT-223 Infineon BSP135H6327XTSA1

This image is representative of the product range

43 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each

$2.25

(exc. GST)

$2.47

(inc. GST)

Units	Per unit
1 - 249	$2.25
250 - 499	$2.17
500 +	$2.11

RS Stock No.:: 354-5708
Mfr. Part No.:: BSP135H6327XTSA1
Brand:: Infineon

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	120 mA
Maximum Drain Source Voltage	600 V
Series	SIPMOS®
Package Type	SOT-223
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	60 Ω
Channel Mode	Depletion
Maximum Gate Threshold Voltage	1V
Minimum Gate Threshold Voltage	2.1V
Maximum Power Dissipation	1.8 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Length	6.5mm
Typical Gate Charge @ Vgs	3.7 nC @ 5 V
Number of Elements per Chip	1
Transistor Material	Si
Width	3.5mm
Minimum Operating Temperature	-55 °C
Height	1.6mm

N-Channel MOSFET, 120 mA, 600 V Depletion, 3-Pin SOT-223 Infineon BSP135H6327XTSA1

Infineon SIPMOS® N-Channel MOSFETs

Related links