Dual N-Channel MOSFET, 4.3 A, 60 V, 8-Pin SOIC Vishay SI4900DY-T1-GE3

RS Stock No.:: 710-3364
Mfr. Part No.:: SI4900DY-T1-GE3
Brand:: Vishay

Dual N-Channel MOSFET, 4.3 A, 60 V, 8-Pin SOIC Vishay SI4900DY-T1-GE3

This image is representative of the product range

Available for back order.

Price (ex. GST) Each (In a Pack of 10)

$1.542

(exc. GST)

$1.696

(inc. GST)

Units	Per unit	Per Pack*
10 +	$1.542	$15.42

*price indicative

RS Stock No.:: 710-3364
Mfr. Part No.:: SI4900DY-T1-GE3
Brand:: Vishay

Technical data sheets

Legislation and Compliance

Product Details

Dual N-Channel MOSFET, Vishay Semiconductor

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Vishay Semiconductor

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	4.3 A
Maximum Drain Source Voltage	60 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	58 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	2 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Width	4mm
Length	5mm
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	13 nC @ 10 V
Number of Elements per Chip	2
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	1.55mm